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1:2 nm  15=3:9). However, the precision listed in the NTRS roadmap is also based on equivalent oxide thickness. , 0:0032 nm  15=3:9). 6-nm high-k gate. 368 nm. e. [0:368 nm  0:1Š=6). 012 nm, as shown earlier. Clearly, metrology precision requirements would appear to be significantly relaxed for such physically thicker single-layer, high-k dielectrics. However, it remains to be seen from an integration perspective whether high-k films can be integrated successfully as a single layer. This concern stems from the potential high reactivity (compared to the stability of SiO2 on Si) of high-k dielectrics with Si.

After oxidation, various combinations of the eight-wafer set were subjected to four different remote plasma nitridation (RPN1–4) and three different anneal (A1–3) processes. The process conditions used in this work are summarized in Table 4. Ninesite optical measurements were performed after each separate process step (oxidation, nitridation, and anneal). Spectroscopic ellipsometry measurements were made over the wavelength range of 240–800 nm. Standard optical tables for Si and SiO2 were used throughout the analysis.

Discussion of Metrology Metrics Static repeatability (sSR ) is the standard deviation of repeated measurements made on the same object under identical conditions over a very short period of time (typically seconds or minutes). Static repeatability represents measurement-to- 20 Hayzelden measurement variation only. Static repeatability may be obtained by loading a wafer into the ellipsometer and making a series of consecutive measurements at one site. Focusing of the ellipsometer occurs prior to the first measurement only.

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