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Extra resources for Applications and Devices
I E E E 54, 1497 (1966). B. W. Hakki and S. Knight, IEEE Trans. Electron Deuices ED-13,94 (1966). S. G. Liu, Appl. Phys. 9,19 (1966). 6 9 J. A. Copeland, Appf. Phys. Lett. 9, 140 (1966). 66 67 54 JOHN A. 31. Current-voltage characteristic ofa bulk negative-resistance device, showing switching to a high-current, constant-voltage mode. current-voltage characteristic shown in Fig. 31. Ridley3 has shown that such a characteristic indicates the existence of regions of different current density, such as filaments or sheaths.
Woodall, Trans. Meiall. A I M E 239,378 (1967). C. Hilsum, K. C. H. Smith, and 8 . C. Taylor, E k r r o n . Lerr. I , 178 (1965). C. A. P. Foxell, J . G. Summers, and K. Wilson, Electron Lett. 1,217 (1965). 1. R. Turner and T. B. Ramachandran. , pp. 80, 81 (1968). 1. APPLICATIONS : BULK NEGATIVE RESISTANCE 57 epitaxial growth of GaAs. Some sample references are indicated for chemical systems reported in the literature. Some of the chemical systems are included only for the sake of completeness and it is not necessarily suggested that they might be practical.
Then the source crystal is 84 85 86 H. M. Manasevit, Appl. Phys. Lett. 12, 156 (1968). H. Nelson, R C A Rev. 24,603 (1963). C. S. Kang and P. E. Greene, Appl. Phys. Lerr. 11, 171 (1967). J. S. Harris, personal communication (1968). L. R. Dawson, Bull. Arner. Phys. SOC. 13, No. 3, Paper BFl (1968) 60 JOHN A. 36. Schematic diagram of the tip technique of liquid-phase epitaxial growth of semiconductors. The three basic steps are illustrated. removed and the seed crystal inserted. The furnace is then cooled slowly, so that the condensing solid material grows epitaxially on the seed.